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  • Gallium
  • GA2269 Gallium Phosphide Wafer (GaP)

    • GA2269 Gallium Phosphide Wafer (GaP)

    Catalog No. GA2269
    Material GaP
    Thickness 400um
    Conductive Type N - type
    Diameter Ø 2"
    Size 2’’ dia x 400um-500um thickness, 5x5x0.3-0.5mm, 10x10x0.45mm,

    Gallium Phosphide Wafer (GaP) is an important semiconductor material that has unique electrical properties to other III-V compound materials. Stanford Advanced Materials (SAM) provides a high-quality single-crystal GaP wafer (Gallium phosphide) to the electronic and optoelectronic industry in diameters up to 2 inches.

    Related products:  Gallium Nitride Wafer, Sapphire Wafer, Silicon Carbide Wafer, Silicon Wafer, Gallium Arsenide Wafer,  Germanium Wafer (Ge wafer).

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