GA2269 Gallium Phosphide Wafer (GaP)
| Catalog No. | GA2269 |
| Material | GaP |
| Thickness | 400um |
| Conductive Type | N - type |
| Diameter | Ø 2" |
| Size | 2’’ dia x 400um-500um thickness, 5x5x0.3-0.5mm, 10x10x0.45mm, |
Gallium Phosphide Wafer (GaP) is an important semiconductor material that has unique electrical properties to other III-V compound materials. Stanford Advanced Materials (SAM) provides a high-quality single-crystal GaP wafer (Gallium phosphide) to the electronic and optoelectronic industry in diameters up to 2 inches.
Related products: Gallium Nitride Wafer, Sapphire Wafer, Silicon Carbide Wafer, Silicon Wafer, Gallium Arsenide Wafer, Germanium Wafer (Ge wafer).
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