Description of Gallium Antimonide Single Crystal Substrate
Gallium antimonide (GaSb) is one of the semiconductor materials, belonging to the III-V family, with an energy gap of 0.726 ev and a lattice constant of 0.61 nm. Gallium antimonide can usually be used as an infrared detector, infrared light-emitting diode, transistor, laser diode, etc.
Specifications of Gallium Antimonide Single Crystal Substrate
CAS Number
|
12064-03-8
|
Molecular formula
|
GaSb
|
Molecular weight
|
191.48
|
Appearance
|
Single crystal substrate
|
Density
|
5.619 g/mL
|
Melting point
|
710°C
|
Odor
|
Odorless
|
Diameter
|
2"
|
3"
|
4"
|
Mobility (cm2V-1S-1)
|
600-700
|
Carrier concentration(cm-3)
|
(1-2)* 1017
|
Diameter (mm)
|
50.5±0.5
|
76.2±0.5
|
100.0±0.5
|
Thickness (μm)
|
500±25
|
600±25
|
800±25
|
Orientation
|
(100) / (111) ±0.5°
|
Primary Flat Length (mm)
|
16±2
|
22±2
|
32.5±2
|
Secondary positioning edge length (mm)
|
8±1
|
11±1
|
18±1
|
TTV(μm)
|
<10
|
<10
|
<20
|
Bow(μm)
|
<10
|
<10
|
<20
|
Warp(μm)
|
<15
|
<15
|
<20
|
Applications of Gallium Antimonide Single Crystal Substrate
- Fiber Optic Communications (FOC)
- Infrared detectors, infrared LEDs and lasers and transistors
- Component of photoresists and other composites where high refractive index is desirable
- Laser diode
Safety Information
Symbol
|
GHS07, GHS09
|
Signal word
|
Warning
|
Hazard statements
|
H302 + H332-H411
|
Precautionary statemets
|
P273
|
Personal protective equipment
|
dust mask type N95 (US), Eyeshields, Gloves
|
RIDADR
|
UN 3077 9 / PGIII
|
WGK Germany
|
2
|