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  • CY2426 Silicon Carbide (SiC) Crystal Substrates

    • CY2426 Silicon Carbide (SiC) Crystal Substrates

    Catalog No. CY2426
    Size 10x10x0.33 mm or customized
    Surface Polished, One sides epi polished on Si face
    Orientation <0001> +/-0.5
    Growth Method MOCVD

    A variety size of Silicon Carbide SiC crystal Substrate can be offered by Stanford Advanced Materials (SAM). We have a professional sales team to offer a fast response within 24 hours and warm service.

    Related products: LiAlO2 Crystal Substrate, LAST Crystal Substrate, LiF Crystal Substrate, NdGaO3 Crystal Substrate, Gallium Antimonide Single Crystal Substrate.

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    CY2426 Silicon Carbide (SiC) Crystal Substrates
    CY2426 Silicon Carbide (SiC) Crystal Substrates
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