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CY2426 Silicon Carbide (SiC) Crystal Substrates

Catalog No. CY2426
Size 10x10x0.33 mm or customized
Surface Polished, One sides epi polished on Si face
Orientation <0001> +/-0.5
Growth Method MOCVD

A variety size of Silicon Carbide SiC crystal Substrate can be offered by Stanford Advanced Materials (SAM). We have a professional sales team to offer a fast response within 24 hours and warm service.

Related products: LiAlO2 Crystal Substrate, LAST Crystal Substrate, LiF Crystal Substrate, NdGaO3 Crystal Substrate, Gallium Antimonide Single Crystal Substrate.

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CY2426 Silicon Carbide (SiC) Crystal Substrates
CY2426 Silicon Carbide (SiC) Crystal Substrates
CY2426 Silicon Carbide (SiC) Crystal Substrates
CY2426 Silicon Carbide (SiC) Crystal Substrates
Description
Specification

SiC Crystal Substrates Description

SiC Crystal has many different crystal structures, which are called polytypes. The most common polytypes of SiC presently being developed for electronics are the cubic 3C-SiC, the hexagonal 4H-SiC and 6H-SiC, and the rhombohedral 15R-SiC. These polytypes are characterized by the stacking sequence of the biatom layers of the SiC structure.

SiC Crystal Substrates Specifications

SiC crystal substrate

Formula weight

 40.10

Lattice constant

a =3.07 A       c = 10.05 A

Stacking sequence

ABCB  

Growth Technique

MOCVD        

Polishing

Silicon face polished

Band Gap

3.26 eV ( Indirect)

Resistivity

0.01~0.5 ohm-cm

Hardness

 9 Mohs

The doping level of nitrogen atoms

 10^18-19 cm^-3

Surface Roughness

< 10 A by AFM

 

SiC Crystal Substrates Applications

Power Electronics
SiC substrates are widely used in power electronic devices like diodes, transistors, and thyristors due to their excellent high-voltage and high-temperature capabilities. They are essential in electric vehicles (EVs), power inverters, and renewable energy systems, enabling better efficiency and smaller, lighter devices.

·  High-Temperature Devices
SiC's ability to withstand high temperatures makes it ideal for use in devices operating in harsh environments, such as aerospace, automotive, and industrial applications. It is commonly used in high-power, high-frequency devices like radar and communication systems.

·  LED Lighting and Lasers
SiC substrates are used in the production of high-efficiency light-emitting diodes (LEDs) and laser diodes. Their high thermal conductivity and wide bandgap make them ideal for applications requiring efficient heat dissipation and high performance in UV, blue, and green light emission.

·  Power RF (Radio Frequency) Devices
SiC is used in RF devices for telecommunications and military applications due to its ability to operate at high frequencies, voltages, and temperatures. These include components like RF transistors and amplifiers.

·  Automotive and Electric Vehicles
SiC substrates are increasingly being used in power modules for electric vehicles and hybrid cars. Their ability to operate at high efficiency and high temperatures helps improve energy conversion in battery management systems, electric motor drives, and on-board charging systems.

·  Solar Inverters
SiC substrates are also used in solar power systems, particularly in solar inverters. The use of SiC helps in improving the efficiency of power conversion and allows for smaller and more reliable inverters for solar energy applications.

·  High-Energy Physics
SiC is used in radiation detectors and other high-energy physics equipment due to its excellent radiation resistance and thermal properties, making it suitable for applications such as particle accelerators and space exploration systems.

SiC Crystal Substrates Package

For long-term storage or shipping, consider using vacuum-sealed bags or heat-sealed bags to protect the SiC substrates from contamination and environmental changes.

FAQs

Q1 Why is SiC preferred over silicon for substrates in power electronics?

Answer: SiC is preferred because it can handle higher voltages, operate at higher temperatures, and offers superior thermal conductivity compared to traditional silicon substrates. This makes it suitable for high-power and high-temperature applications, such as electric vehicle inverters and power supplies.

Q2 How is an SiC wafer different from a standard silicon wafer?

Answer: SiC wafers have a higher thermal conductivity and can withstand higher operating temperatures compared to standard silicon wafers. This allows SiC wafers to be used in applications requiring more robust performance, such as electric vehicles, power electronics, and industrial applications.

Q3 What are epitaxial SiC wafers?

Answer: Epitaxial SiC wafers are SiC substrates that have a thin layer of high-quality SiC crystal grown on top of a lower-quality SiC substrate. This layer enhances the performance of the wafer for specific applications, such as high-performance power devices or RF devices.

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