IN2270 Indium Antimonide Wafer

Catalog No.	IN2270
Material	InSb
Thickness	500 um - 625 um
Conductive Type	N - type
Diameter	Ø 2" Ø 3"

Stanford Advanced Materials (SAM) provides a wide range of compound wafers including GaAs wafers, GaP wafers, GaSb wafers, InAs wafers, and InP wafers.

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Description

Specification

Description of Indium Antimonide Wafer

Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiation source as it is a strong photo-Dember emitter.

Specifications of Indium Antimonide Wafer

Growth	LEC
Diameter	Ø 2" / Ø 3"
Thickness	500 um - 625 um
Orientation	(100)+/- 0.5°
Off orientation	Off 2° to 10°
Surface	One side polished or two sides polished
Flat options	EJ or SEMI. Std.
Mobility	(5.0-3.5)E5 cm2/Vs
EPD	<= 200 cm-2
Grade	Epi polished grade / mechanical grade
Package	Single wafer container