CY2175 Silicon Carbide Wafer

Catalog No.	CY2175
Material	SiC
Thickness	260 um ~ 500 um
Conductive Type	N - type / Semi-insulating
Diameter	Ø 1" /Ø 2" / Ø 3" / Ø 4"/ Ø 6"
Polytype	4H / 6H
Resistivity ( SI )	> 1E5 ohm-cm

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Description

Specification

Technical Data Sheet

Description of Silicon Carbide Wafer

As a next-generation semiconductor material, silicon carbide (SiC) wafer has unique electrical properties and excellent thermal properties. The sic-based device has been used for short-wavelength optoelectronic, high-temperature, radiation-resistant applications. In the applications of high power and high temperature, SiC wafer is more suitable compared to the silicon wafer and GaAs wafer.

Specifications of Silicon Carbide Wafer

Polytype	4H / 6H
Diameter	Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 6"
Thickness	260 um ~ 500 um
Orientation	On axis <0001> / Off axis <0001> off 4°
Conductivity	N - type / Semi-insulating
Dopant	N2 ( Nitrogen ) / V ( Vanadium )
Resistivity (4H-N)	0.015 ~ 0.03 ohm-cm
Resistivity (6H-N)	0.02 ~ 0.1 ohm-cm
Resistivity (SI)	> 1E5 ohm-cm
Surface	CMP polished + One side polished or two sides polished
TTV	≤ 15 um
Bow / Warp	≤ 25 um
Grade	Production grade / Research grade

Polytype	6H-SiC	4H-SiC
Crystal stacking sequence	ABCABC	ABCB
Lattice parameter	a=3.073A, c=15.117A	a=3.076A, c=10.053A
Band-gap	3.02 eV	3.27 eV
Dielectric constant	9.66	9.6
Refraction Index	n0 =2.707, ne =2.755	n0 =2.719, ne =2.777

Applications of Silicon Carbide Wafer

High-frequency device
- High power device
- GaN epitaxy device
- High-temperature device
- Optoelectronic device
- Light-emitting diode

Silicon Carbide Wafer Packing

Our Silicon Carbide Wafer is carefully handled during storage and transportation to preserve the quality of our product in its original condition.

FAQs

1 What is the cost of Silicon Carbide (SiC) Wafers?
The cost of SiC wafers depends on several factors, including wafer size, quality, and any customization requirements. SiC wafers are generally more expensive than traditional silicon wafers due to the higher material costs and specialized manufacturing processes involved. However, they provide long-term benefits in terms of performance, efficiency, and reliability.

2 How do Silicon Carbide Wafers compare to Silicon Wafers?
While silicon wafers are commonly used for semiconductor devices, SiC wafers outperform them in certain applications due to:

Higher Power Handling: SiC devices can handle higher voltages and currents, making them suitable for power electronics.
Higher Temperature Operation: SiC can function at higher temperatures than silicon, making it ideal for demanding environments.
Better Efficiency: SiC wafers result in lower switching losses and higher efficiency, especially in high-frequency and high-power devices.

3 Can Silicon Carbide Wafers be used in 5G and RF applications?
Yes, Silicon Carbide wafers are highly suitable for RF and 5G applications due to their ability to handle high frequencies and high voltages. SiC devices, such as transistors and amplifiers, are used in telecommunications infrastructure, including 5G base stations and satellite communications, due to their high power efficiency and performance.