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CY2173 Sapphire Wafer

Catalog No. CY2173
Material Al2O3
Thickness 430mm, 0.5mm, 1mm
Diameter Ø 1" /Ø 2" / Ø 3" / Ø 4"/ Ø5"
Thermal Conductivity 46 W/mk
Dielectric constant 11.58

Stanford Advanced Materials (SAM) produces any diameters from 1’’ (25.4 mm) to 5’’ (152.4mm) in order to provide the most flexibility possible. We can offer complete orientation options including C plane, A plane, R plane, and M plane.

Related products: Gallium Arsenide Wafer, Gallium Nitride Wafer, Silicon Carbide Wafer, Silicon Wafer, Germanium Wafer (Ge wafer).

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CY2173 Sapphire Wafer
CY2173 Sapphire Wafer
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