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CY2404 Aluminum Oxide Sapphire Crystal Substrate, Al2O3

Catalog No. CY2404
Size Dia.1’’x 0.5mm; Dia.2’ x 1mm; 10 x10 x0.5mm; 5×5×0.5mm
Purity ≥99.95%
Thickness 0.5mm; 1mm
Molecular Formula Al2O3
Crystal Class Hexagonal System

Aluminum Oxide Sapphire Crystal Substrate of the highest quality is supplied in Stanford Advanced Materials. Al2O3 substrate enables the most efficient production at your location. We offer quick turnaround and customized solutions for our customers.

Related products: LSAT Crystal Substrates; Silicon Wafer; Potassium Tantalate Crystal Substrates; Aluminum Single Crystal Substrate

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CY2404 Aluminum Oxide Sapphire Crystal Substrate, Al2O3
Aluminum Oxide Sapphire Crystal Substrate
CY2404 Aluminum Oxide Sapphire Crystal Substrate, Al2O3
Aluminum Oxide Sapphire Crystal Substrate
Aluminum Oxide Sapphire Crystal Substrate
CY2404 Aluminum Oxide Sapphire Crystal Substrate, Al2O3
Description
Specification
Technical Data Sheet

Aluminum Oxide Sapphire Crystal Substrate Description

Aluminum oxide sapphire crystal substrate has good thermal characteristics, excellent electrical and dielectric properties, and is resistant to chemical corrosion. It is resistant to high temperatures, good thermal conductivity, high hardness, infrared transmission, and chemical stability. It is widely used in high temperature resistant infrared window materials, III-V nitrides, and various epitaxial film substrate materials.

Aluminum Oxide Sapphire Crystal Substrate Specifications

Crystal Class

Hexagonal system

Lattice Constants

a=4.785, c=12.991

Density

3.98g/cm3

Melting Point

2040 °C

Hardness

9(mohs)

Elastic Coefficient  

C11= 495; C12=160; C33= 497; C44= 146; C13= 115; C14= 23 GPa

Thermal Conductivity

46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) 

Thermal Expansion

7.5 x 10-6 /℃

Standard Orientation

<0001>、<11-20>、<1-102>、<10-10>±0.2º

Standard Size

 5x5mm, 10x10mm, Dia1"(25.4mm), Dia2"(50.8mm)

Or customized.

Standard Thickness

0.5mm, 1.0mm, 2.0mm, 5.0mm

Dielectric Constant

~9.4@ 300K at A-axis ~11.58@ 300K at C-axis

Polishing

Single side polished or Double side polished

Aluminum Oxide Sapphire  Crystal Substrate Applications

Aluminum Oxide Sapphire Crystal Substrates are used in the following applications:

- Sapphire substrates: IR Detectors; microwave integrated circuits;
- Aerospace: withstand high heat, windows, countermeasures lamps;
- Medical: surgical systems, contact tips for various surgical laser applications, endoscope lenses;
- Watch industry.

Aluminum Oxide Sapphire  Crystal Substrate Package

Each crystal substrate is carefully packaged to prevent damage during transit, with protective layers and anti-static materials.

FAQs

Q1 What are the types of Sapphire Substrates?

Sapphire substrates come in several crystallographic orientations, including:

  • C-plane (0001): Most commonly used for devices requiring high optical clarity and high-quality epitaxial growth.
  • R-plane (1-102): Preferred for certain optical and electronic applications.
  • M-plane (1-100): Less commonly used but suitable for specific growth orientations.

Q2 Why is Sapphire preferred for LED applications?

Sapphire is preferred in LED applications due to its ability to provide a high-quality, smooth surface for epitaxial growth of semiconductor layers. Its high thermal conductivity helps dissipate heat efficiently, and its mechanical strength ensures durability and resistance to damage.

Q3. Can Sapphire Substrates be used in high-temperature applications?

Yes, sapphire substrates are well-suited for high-temperature applications. Their high melting point (around 2,000°C) makes them ideal for use in environments where high temperatures are common, such as high-power electronics and aerospace components.

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