Description of LSAT Crystal Substrates
Compared with the more commonly used high-temperature superconducting thin-film LaAlO3 crystal, (La, Sr) (Al, Ta) O3 (referred to as LSAT) has the same crystal structure, and the phase transition temperature is low, and twins are not easy to appear, this excellent high temperature superconducting thin film substrates are gradually recognized. At the same time, its <111> direction has the same hexagonal symmetry as GaN, so it can be used as a substrate material for GaN and AlN films.

Specification of LSAT Crystal Substrates
Major Capability Parameter |
Crystal Structure |
Cubic |
Lattice Constant |
a=3.868 A |
Melt Point(°C) |
1840 |
Density |
6.74(g/cm3) |
Hardness |
6.5(mohs) |
Dielectric Constant |
22 |
Thermal Expansion Coefficient |
10 x 10-6 /K |
Appearance |
Colorless, light brown |
Size
|
10x3, 10x5, 10x10, 15x15, 20x15, 20x20 |
Ф2″ |
Thickness |
0.5mm, 1.0mm |
Polishing |
Single or double side polished |
Crystal Orientation |
<100>, <110>, <111>±0.5º |
Orientation Accuracy |
±0.5° |
Edge Orientation Accuracy: |
2° (special in 1°) |
Ra |
≤5Å (5µm×5µm) |
Applications of LSAT Crystal Substrates
Epitaxial Growth of Thin Films
LSAT crystal substrates are widely used for epitaxial growth of complex oxide thin films, such as perovskite materials, due to their excellent lattice matching and thermal stability.
· High-Temperature Superconductors
LSAT substrates are ideal for depositing high-temperature superconducting (HTS) films like YBa₂Cu₃O₇ (YBCO), enabling their application in advanced superconducting devices and research.
· Ferroelectric and Multiferroic Devices
The unique properties of LSAT substrates make them a preferred choice for fabricating ferroelectric and multiferroic thin films, which are critical for memory storage, sensors, and actuators.
· Spintronic Applications
LSAT is often used in spintronic device fabrication, supporting the growth of materials like SrRuO₃ and La₀.₇Sr₀.₃MnO₃, which are essential for spin valves, magnetic tunnel junctions, and other spintronic technologies.
· Oxide-Based Electronics
LSAT substrates support the development of oxide-based electronic devices, such as transistors and capacitors, due to their low lattice mismatch with various oxide materials.
· Tunable Dielectric Resonators
The dielectric properties of LSAT make it suitable for use in tunable dielectric resonators, filters, and other high-frequency components for telecommunications.
· Two-Dimensional Electron Gas (2DEG) Systems
LSAT substrates are employed in creating 2DEG systems at oxide interfaces, which are key for studying quantum phenomena and developing next-generation quantum devices.
· Photonic Devices
LSAT is used in photonic applications for growing high-quality thin films with optical properties suitable for lasers, waveguides, and optical modulators.
· Research in Perovskite Oxides
LSAT substrates enable research into perovskite oxide materials, allowing scientists to explore their magnetic, electric, and catalytic properties for potential new applications.
· Quantum Computing
LSAT substrates play a role in quantum computing, providing a stable platform for fabricating qubits and other quantum structures due to their high thermal stability and minimal defects.
Packaging of LSAT Crystal Substrates
LSAT Crystals are meticulously packaged with anti-static protective layers, moisture-resistant sealing, and shock-absorbing materials to ensure safe transit and storage. Each package includes detailed labeling and documentation to meet international shipping standards.
FAQs
Q1 Are LSAT substrates suitable for high-temperature applications?
Yes, LSAT substrates have excellent thermal stability and are widely used in high-temperature applications such as superconducting films and oxide growth.
Q2 Are LSAT substrates suitable for spintronic applications?
Yes, LSAT substrates are commonly used for spintronic devices due to their compatibility with materials like SrRuO₃ and La₀.₇Sr₀.₃MnO₃.
Q3 What are LSAT crystal substrates used for?
LSAT crystal substrates are used in epitaxial growth of thin films, high-temperature superconductors, spintronics, ferroelectric devices, quantum computing, and oxide-based electronics.