Sapphire Epitaxial Wafer EPI Wafer Description
The essence of silicon on sapphire substrate (SOS) is a heteroepitaxial process, that is, a thin layer of SI (typically less than 0.6 microns) is grown on a sapphire wafer. S0S belongs to the silicon epitaxial technology on an insulator substrate in CMOS technology (SOI) Because of its inherent radiation resistance, SOS is mainly used in aerospace and military applications. Usually, high-purity artificially cultivated sapphire crystals are used. The silane is usually decomposed by heating and then deposited on the sapphire substrate to obtain silicon. The advantage of SOS is that its excellent electrical insulation can effectively prevent radiation caused by scattered current from spreading to nearby components.
Sapphire Epitaxial Wafer EPI Wafer Specifications
Parameters range for Silicon on Sapphire (SOS) Epi Wafers
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Wafer diameter
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76 mm, 100 mm, 150 mm
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Orientation
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(1012) ± 1º (R-plane)
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Substrate dopant
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-
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Epi-layer thickness, µm
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0,3 – 2,0
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Epi-layer dopant
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Phosphorous, Boron
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n-type
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according to spec.
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p-type
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1,0 – 0,01
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Sapphire Epitaxial Wafer EPI Wafer Applications
SOS is mainly used in aerospace and military applications
Sapphire Epitaxial Wafer EPI Wafer Packaging
Our Sapphire Epitaxial Wafer EPI Wafer is carefully handled during storage and transportation to preserve the quality of our product in its original condition.