CY3306 Sapphire Epitaxial Wafer EPI Wafer

Catalog No.	CY3306
Material	Sapphire
Size	D76mm, 100mm, 150mm
Epi-layer thickness, µm	0.3-2.0
Epi-layer dopant	Phosphorous, Boron

Sapphire Epitaxial Wafer EPI Wafer features excellent electrical insulation to effectively prevent radiation caused by scattered current from spreading to nearby components. Stanford Advanced Materials (SAM) has rich experience in manufacturing and supplying high-quality optical products.

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Description

Specification

Sapphire Epitaxial Wafer EPI Wafer Description

The essence of silicon on sapphire substrate (SOS) is a heteroepitaxial process, that is, a thin layer of SI (typically less than 0.6 microns) is grown on a sapphire wafer. S0S belongs to the silicon epitaxial technology on an insulator substrate in CMOS technology (SOI) Because of its inherent radiation resistance, SOS is mainly used in aerospace and military applications. Usually, high-purity artificially cultivated sapphire crystals are used. The silane is usually decomposed by heating and then deposited on the sapphire substrate to obtain silicon. The advantage of SOS is that its excellent electrical insulation can effectively prevent radiation caused by scattered current from spreading to nearby components.

Sapphire Epitaxial Wafer EPI Wafer Specifications

Parameters range for Silicon on Sapphire (SOS) Epi Wafers
Wafer diameter	76 mm, 100 mm, 150 mm
Orientation	(1012) ± 1º (R-plane)
Substrate dopant	-
Epi-layer thickness, µm	0,3 – 2,0
Epi-layer dopant	Phosphorous, Boron
n-type	according to spec.
p-type	1,0 – 0,01

Sapphire Epitaxial Wafer EPI Wafer Applications

SOS is mainly used in aerospace and military applications

Sapphire Epitaxial Wafer EPI Wafer Packaging

Our Sapphire Epitaxial Wafer EPI Wafer is carefully handled during storage and transportation to preserve the quality of our product in its original condition.