Ti:Sapphire (Titanium-doped Sapphire Crystal)

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CY0481 Ti:Sapphire (Titanium-doped Sapphire Crystal)

Catalog No.	CY0481
Diameter	2-50mm

Titanium-doped sapphire (Ti:sapphire) crystals have an absorption band in the green region and can be used in medical laser systems, lidars and laser spectroscopy. Stanford Advanced Materials (SAM) is a trusted supplier and manufacturer of Ti:Sapphire Crystal.

Related products: Nd:YAG, Er:YAG, Ho:Cr:Tm:YAG.

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Description

Specification

Ti:Sapphire Description

Ti:Sapphire, or Titanium-doped Sapphire Crystal, is a synthetic crystal material that contains small amounts of titanium ions (Ti4+) substituting for aluminum ions (Al3+) in the crystal lattice of sapphire (α-Al2O3). This titanium doping introduces additional energy levels within the crystal, allowing it to absorb and emit light in the near-infrared and visible regions of the electromagnetic spectrum. The doping process also broadens the useful emission range of sapphire.

Ti:Sapphire Crystals are highly transparent in the visible and near-infrared regions. They are commonly used as gain media for solid-state lasers, enabling the generation of ultrafast laser pulses. The broad emission bandwidth of Ti:Sapphire crystals, coupled with their tunability, makes them valuable in various scientific and technological applications, including spectroscopy, biomedical imaging, micromachining, and material processing.

Typically, the Ti:Sapphire crystal is pumped with a laser, such as a frequency-doubled Nd:YAG laser, which excites the titanium ions. This excitation leads to the emission of intense and short laser pulses in the visible and near-infrared regions when the crystal is placed within an optical resonator.

Ti:Sapphire crystals offer advantages like high gain, broad tunability (from ultraviolet to near-infrared wavelengths), high-power capability, and excellent beam quality. These properties make Ti:Sapphire crystals popular in research laboratories and industrial settings for various scientific advancements and technological applications.

Ti:Sapphire Specifications

Orientation	Optical axis C normal to rod axis
Ti2O3 Concentration	0.06 - 0.2wt %
Figure Of Merit	100~300(>300 available on special requests)
Diameter	2-50mm
Path Length	2-100mm
End Configurations	Flat/Flat or Brewster/Brewster ends
Flatness	<λ/10 @ 633 nm
Parallelism	<10 arc sec
Surface Finishing	<10/5 scratch/dig to MIL-O-13830A
Wavefront Distortion	<λ/4 per inch

Notes:

1. To inquire or order a finished crystal, please provide the specifications as listed above. For most applications, we only need to know the following:

1) Nd-dopant concentration; 2) Sizes; 3) Surface quality; 4) Coating.

2. For special requests, please provide a detailed specification for evaluation and fabrication.

Ti:Sapphire Applications

1. Laser technology: Ti:sapphire crystals are widely used as gain media in solid-state lasers. These lasers find applications in various fields, including spectroscopy, metrology, material processing, and biomedical research.

2. Time-resolved spectroscopy: Ti:sapphire crystals enable the generation of ultrashort pulses that can be used to study ultrafast dynamics in various materials and biological systems. Time-resolved spectroscopy techniques using Ti:sapphire lasers have applications in chemistry, physics, and biology.

3. Optical coherence tomography (OCT): OCT is a medical imaging technique that uses low-coherence light to capture high-resolution, cross-sectional images of biological tissues. Ti:sapphire lasers provide the necessary light source with high coherence and tunability, enabling high-quality OCT imaging for various medical and biological applications.

4. Pump-probe spectroscopy: The ultrashort pulses generated by Ti:sapphire lasers are used as pump and probe beams in pump-probe spectroscopy. This technique allows for the investigation of ultrafast processes by measuring the changes in the sample's response induced by the pump pulse.

Specification

Orientation	Optical axis C normal to rod axis
Ti2O3 Concentration	0.06 - 0.2wt %
Figure Of Merit	100~300(>300 available on special requests)
Diameter	2-50mm
Path Length	2-100mm
End Configurations	Flat/Flat or Brewster/Brewster ends
Flatness	<λ/10 @ 633 nm
Parallelism	<10 arc sec
Surface Finishing	<10/5 scratch/dig to MIL-O-13830A
Wavefront Distortion	<λ/4 per inch