Pyrolytic Boron Nitride Crucible (MBE Type) Description
Pyrolytic Boron Nitride Crucible (MBE Type) is a specialized container designed for use in Molecular Beam Epitaxy (MBE) systems. MBE is a precise thin-film deposition technique used in semiconductor manufacturing. It involves the deposition of material layer by layer on a substrate using molecular or atomic beams. MBE is known for its ability to create high-quality thin films with precise control over thickness and composition. PBN Crucible is often used in high-temperature and vacuum environments, suitable for applications in semiconductor manufacturing and crystal growth.
Pyrolytic Boron Nitride Crucible (MBE Type) Specifications
PBN Mechanical Characteristics
Item
|
Data
|
Unit
|
Density
|
g/cm3
|
1.95-2.20
|
Tensile Strength
|
MPa
|
112
|
Bending Strength
|
MPa
|
173
|
Compression Strength
|
MPa
|
154
|
Young's Modulus
|
GPa
|
18
|
Thermal Conductivity
(under 1500℃)
|
W/m℃
|
"a" 60
"c" 2
|
Specific Heat
|
J/g·℃
|
0.90 (RT)
|
Resistivity
|
Ω.cm
|
2×1015
|
Dielectric Strength
|
D.C. volts/mm
|
2×1015
|
Dielectric Constant
|
-
|
"c" 3.07
|
Metal Impurity Content
|
ppm
|
<10
|
Specifications of PBN LEC Crucible
Max. Diameter (ID)
|
Max. Height
|
Thickness
|
12"
|
17"
|
customized
|
Pyrolytic Boron Nitride Crucible (MBE Type) Applications
Pyrolytic Boron Nitride Crucible (MBE Type) is integral to the Molecular Beam Epitaxy process, where it facilitates the controlled evaporation of materials, maintains high purity, and contributes to the production of high-quality thin films for semiconductor device manufacturing.
Pyrolytic Boron Nitride Crucible (MBE Type) Packaging
Our Pyrolytic Boron Nitride Crucible (MBE Type) is carefully handled during storage and transportation to preserve the quality of our product in its original condition.
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