CY3307 Epitaxial Wafer SiC-GaN EPI

Catalog No.	CY3307
Substrate Material	SiC
Diameter	4, 5, 6, 8 inch
Epi-layer thickness, µm	0.1-100
Orientation	<100>, <111>
Substrate Thickness (um)	300-725

Epitaxial Wafer SiC-GaN EPI refers to a semiconductor thin film grown on a substrate. Stanford Advanced Materials (SAM) has rich experience in manufacturing and supplying high-quality optical products.

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Wafer Diameter		4"	5"	6"	8"
EPI Layer	Dopant	Boron, Phos, Arsenic
	Orientation	<100>, <111>
	Conductivity type	P/P++, N/N++, N/N+, N/N+/N++, N/P/P, P/N/N+
	Resistivity	0.001-50 Ohm-cm
	Res. Uniformity	Standard <6%, Maximum Capabilities <2%
	Thickness (um)	0.1-100
	Thickness Uniformity	Standard <3%, Maximum Capabilities <1%
Substrate	Orientation	<100>, <111>
	Conductivity type/Dopant	P Type/Boron , N Type/Phos, N Type/As, N Type/Sb
	Thickness (um)	300-725
	Resistivity	0.001-100 Ohm-cm
	Surface Condition	P/P, P/E
	Particle	<50@.0.5um

Wafer Diameter		4"	5"	6"	8"
EPI Layer	Dopant	Boron, Phos, Arsenic
	Orientation	<100>, <111>
	Conductivity type	P/P++, N/N++, N/N+, N/N+/N++, N/P/P, P/N/N+
	Resistivity	0.001-50 Ohm-cm
	Res. Uniformity	Standard <6%, Maximum Capabilities <2%
	Thickness (um)	0.1-100
	Thickness Uniformity	Standard <3%, Maximum Capabilities <1%
Substrate	Orientation	<100>, <111>
	Conductivity type/Dopant	P Type/Boron , N Type/Phos, N Type/As, N Type/Sb
	Thickness (um)	300-725
	Resistivity	0.001-100 Ohm-cm
	Surface Condition	P/P, P/E
	Particle	<50@.0.5um

CY3307 Epitaxial Wafer SiC-GaN EPI

Epitaxial Wafer SiC-GaN EPI Description

Epitaxial Wafer SiC-GaN EPI Specifications

Epitaxial Wafer SiC-GaN EPI Applications

Epitaxial Wafer SiC-GaN EPI Packaging

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