CY4393 Tin Diselenide (SnSe2) Crystal

Tin Diselenide Crystal Description

Tin Diselenide Crystal is a semiconductor having an indirect bandgap. SnSe₂ is 1.0 eV direct band gap semiconductor. It becomes 1.4 eV direct semiconductor in the monolayer form. It displays remarkable and unusual optical, mechanical, and electrical properties. Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate.

Tin Diselenide Crystal Specifications

Tin Diselenide Crystal Application

Tin Diselenide Crystal is a semiconductor with an indirect band gap of ~2.2 eV.

Tin Diselenide Crystal XRD

Tin Diselenide Crystal Packaging

Our Tin Diselenide Crystal is carefully handled during storage and transportation to preserve the quality of our product in its original condition.

Tin Diselenide Crystal FAQs

Q1: What is tin diselenide (SnSe2)?

Tin diselenide is a compound with the chemical formula SnSe2. It belongs to the group IV-VI semiconductors and forms as a layered, n-type semiconductor with a hexagonal structure similar to that of molybdenum disulfide (MoS2).

Q2: What are the properties of tin diselenide crystals?

SnSe2 crystals exhibit properties such as indirect band gap semiconductor behavior, good optical and electronic properties, and thermal stability. It has a band gap of approximately 1.0 eV, making it suitable for infrared optoelectronics and photovoltaic applications.

Q3: How are tin diselenide crystals synthesized?

SnSe2 crystals can be synthesized using methods like chemical vapor transport (CVT), Bridgman-Stockbarger technique, and vapor phase deposition. Researchers also use mechanical or liquid exfoliation techniques to produce SnSe2 in thin-layer form for various applications.