GET A QUOTE
/ {{languageFlag}}
Select Language
Stanford Advanced Materials {{item.label}}
Stanford Advanced Materials
/ {{languageFlag}}
Select Language
Stanford Advanced Materials {{item.label}}

SC2276 SOI Wafer

Catalog No. SC2276
Material Si
Diameter 2'' to 12''
Dopant Boron/Phosphorous/Antimony/Arsenic
Conductivity P-type/N-type / Intrinsic

SAM provides Silicon Thermal Oxide Wafer in diameter from 2" to 12", we always choose prime grade and a defect-free silicon wafer as a substrate for growing high uniformity thermal oxide layer to meet your specific requirements.

Related Products: Indium Antimonide Wafer, Silicon Carbide Wafer, Gallium Phosphide Wafer, Silicon Wafer, 1851 Germanium Wafer (Ge wafer).

INQUIRY
Add to Inquiry List
SC2276 SOI Wafer
SC2276 SOI Wafer
Description
Specification

GET A QUOTE

Send us an Inquiry now to find out more Information and the latest prices,thanks!

* Your Name
* Your Email
* Product
* Phone Number
* Country

United States

    Comments
    * Check Code
    Leave A Message
    Leave A Message
    * Your Name:
    * E-mail:
    * Product name:
    * Phone Number:
    * Message: