SC2276 SOI Wafer

Catalog No.	SC2276
Material	Si
Diameter	2'' to 12''
Dopant	Boron/Phosphorous/Antimony/Arsenic
Conductivity	P-type/N-type / Intrinsic

SAM provides Silicon Thermal Oxide Wafer in diameter from 2" to 12", we always choose prime grade and a defect-free silicon wafer as a substrate for growing high uniformity thermal oxide layer to meet your specific requirements.

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Description

Specification

Description of SOI Wafer

Silicon on insulator (SOI) wafers are most common in microelectromechanical systems (MEMS) and advanced complementary metal-oxide-semiconductor (CMOS) integrated circuit fabrication and can improve many of the processes that more traditional silicon wafers are used in. These wafers provide a manufacturing solution that helps reduce power and heat while increasing the speed performance of a device. SOI wafers are unique products for specific end-user applications.

SOI-wafer

Specifications of SOI Wafer

Method	Fusion bonding
Diameter	2'' to 12''
Device thickness	2 um ~ 300 um
Tolerance	+/- 0.5 um ~ 2 um
Orientation	<100> / <111> / <110> or others
Conductivity	P-type / N-type / Intrinsic
Dopant	Boron / Phosphorous / Antimony / Arsenic
Resistivity	0.001 ~ 100000 ohm-cm
Oxide thickness	500A ~ 4 um
Tolerance	+/- 5%
Handle wafer	>= 300 um
Surface	Double sides polished
Coating	Oxide and nitride can be supplied on both sides of SOI wafer

Applications of SOI Wafer

The application areas include pressure sensors, silicon microphones, and fluidic components, while thicker layers are suitable for inertial sensor manufacturing. It can also be used in IC and MEMS process integration. It also enables integrated backside packaging and hermetic sealing.