CB3693 N-doped Multi-walled Carbon Nanotubes

Catalog No.	CB3693
Purity	>98%
Diameter	30-80 nm (outer)
Length	10-30um
Specific Surface Area(m2/g)	>30
Color	Black powder
Growth Method	CVD

N-doped Multi-walled Carbon Nanotubes have the best field emission performance, so it is widely used in many fields such as cold emission electron guns and flat panel displays. Stanford Advanced Materials (SAM) has rich experience in manufacturing and supplying high-quality N-doped Multi-walled Carbon Nanotubes.

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Description

Specification

N-doped Multi-walled Carbon Nanotubes Description

N-doped Multi-walled Carbon Nanotubes have the best field emission performance, so it is widely used in many fields such as cold emission electron guns and flat panel displays. The doping of heterogeneous elements in carbon nanotubes can effectively control the crystal structure and electronic structure of carbon nanotubes, and produce physical and chemical properties that are superior to those of pure carbon nanotubes. Therefore, it has become a focus of current research.

N-doped Multi-walled Carbon Nanotubes Specifications

Specification	Unit	N-doped Multi-walled Carbon Nanotubes	Characterization Method
Specification	Unit	TNMCN7	Characterization Method
OD	nm	30-80nm	TEM
Purity	wt%	>98	TGA & TEM & SEM
N Content	wt%	>2.5	EDS
Length	microns	10-30	TEM &SEM
SSA	m²/g	>30	BET
Burning point	℃	460	TPO

Element	Area (CPS)	Contents	Components
C	8000	0.25	91.63%
O	1300	0.66	5.64%
N	400	0.42	2.73%

N-doped Multi-walled Carbon Nanotubes TG Curve

N-doped Multi-walled Carbon Nanotubes Applications

Catalysts, energy storage, organic photovoltaics, OLED.

N-doped Multi-walled Carbon Nanotubes Packaging

Our N-doped Multi-walled Carbon Nanotubes is carefully handled during storage and transportation to preserve the quality of our product in its original condition.