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OP4387 Germanium Sulphide (GeS) Crystal

Catalog No. OP4387
Material GeS
Crystal Size ~10 mm
Crystal Structure Orthorhombic
Purity >99.995%

Germanium Sulphide Crystal is a semiconductor with an indirect band gap of 1.6 eV. Stanford Advanced Materials (SAM) has rich experience in manufacturing and supplying high-quality Optical Products.

Related products: Arsenicum Telluride Crystal (As2Te3), Bismuth Sulfide Crystal (Bi2S3), Molybdenum Sulfide Selenide (MoSSe) Powder

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Germanium Sulphide (GeS) Crystal
Germanium Sulphide (GeS) Crystal
Germanium Sulphide (GeS) Crystal
Germanium Sulphide (GeS) Crystal
Description
Specification
Technical Data Sheet

Germanium Sulphide Crystal Description

Germanium Sulphide Crystal is a semiconductor with an indirect band gap of 1.6 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. GeS belongs to the group-14 transition metal monochalcogenides.

Germanium Sulphide Crystal Specifications

Material

GeS

Crystal size

~10 mm

Electrical properties

Semiconductor

Crystal structure

Orthorhombic

Unit cell parameters

a = 0.4025, b = 1.117 nm, c = 1.135 nm, α = β = γ = 90°

Germanium Sulphide Crystal Application

Germanium Sulphide Crystal is a 2D semiconductor with 1.65 eV band gap in the bulk form.

Germanium Sulphide Crystal XRD

Germanium Sulphide Crystal Packaging

Our Germanium Sulphide Crystal is carefully handled during storage and transportation to preserve the quality of our product in its original condition.

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