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Catalog No. | AS3651 |
Material | Ar2S3 |
Growth Method | Bridgman-Stockbarger |
Band gap | ~2.2 eV in bulk |
Purity | 99.999% |
Arsenic Sulfide (As2S3) is a direct gap semiconductor and has a band-gap at around 2.5 eV. Stanford Advanced Materials (SAM) has rich experience in manufacturing and supplying high-quality Optical Products.
Related products: CrBr3 Crystal, Hafnium Disulfide (HfS2), Tungsten Disulfide (WS2) Crystal
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