AS3651 Arsenic Sulfide (Ar2S3) Crystal

Catalog No.	AS3651
Material	Ar2S3
Growth Method	Bridgman-Stockbarger
Band gap	~2.2 eV in bulk
Purity	99.999%

Arsenic Sulfide (As2S3) is a direct gap semiconductor and has a band-gap at around 2.5 eV. Stanford Advanced Materials (SAM) has rich experience in manufacturing and supplying high-quality Optical Products.

INQUIRY

Description

Specification

Arsenic Sulfide (Ar2S3) Crystal Description

In the bulk form, Arsenic Sulfide (As2S3) is a direct gap semiconductor and has a band-gap at around 2.5 eV. Similar to molybdenum disulfide, it has a layered structure (lamellar) with weak interlayer coupling and can be isolated down to monolayers. The monolayer thickness measures ~0.8 nm and the monolayer As2S3 is waiting to be discovered both experimentally and theoretically. Our crystals are grown by state-of-the-art growth techniques over 8 weeks and show high crystallinity.

Arsenic Sulfide (Ar2S3) Crystal Specifications

Growth Technique	Bridgman-Stockbarger
Band gap	~2.2 eV in bulk
Size	~10mm
Purity	99.999%

Arsenic Sulfide (Ar2S3) Crystal Raman Spectrum

Arsenic Sulfide (Ar2S3) Crystal Photoluminescence Spectrum

Arsenic Sulfide (Ar2S3) Crystal Applications

As2S3 comes ready for exfoliation and is ideal for 2D research.

Arsenic Sulfide (Ar2S3) Crystal Packaging

Our Arsenic Sulfide (Ar2S3) Crystal is carefully handled during storage and transportation to preserve the quality of our product in its original condition.