Germanium (IV) Iodide Description
Germanium (IV) Iodide (CAS 13450-95-8) is an orange-red crystalline solid with melting point 144 °C and boiling point 440 °C (with decomposition). Its specific density is 4.32. It is soluble in non-polar solvents like carbon disulfide, chloroform or benzene.
Germanium (IV) Iodide Specifications
Product Name
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Germanium (IV) Iodide
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CAS Number
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13450-95-8
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Molecular formula
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GeI4
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Purity
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99.99%
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Molecular weight
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580.26
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Density
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4.32 g/cm3
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Melting point
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144 °C
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Boiling point
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440 °C
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Safety Information
Symbol
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GHS05 |
Signal word
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Danger
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Hazard statements
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H314
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Precautionary statements
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P260 - P280 - P303 + P361 + P353 - P305 + P351 + P338 + P310
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Personal protective equipment
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Eyeshields, Faceshields, Gloves, respirator cartridge type N100 (US), type P1 (EN143) respirator filter, type P3 (EN 143) respirator cartridges
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RIDADR
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UN 3260 8 / PGII
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WGK Germany
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WGK 3
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Germanium (IV) Iodide (CAS 13450-95-8) Applications
The growth of semiconductor nanowires has attracted immense attention in the field of nanotechnology as nanowires are viewed as the potential basic building blocks of future electronics. The recent renewed interest in germanium as a material for nanostructures can be attributed to its higher carrier mobility and larger Bohr radius as compared to silicon. Self-assembly synthesis of germanium nanowires (GeNWs) is often obtained through a vapor-liquid-solid mechanism, which is essentially a catalytic tip-growth process. Here we demonstrate that by introducing an additional precursor, germanium tetraiodide (GeI(4)), in a conventional furnace system that produces GeNWs on silicon, tubular structures of germanium-silicon (GeSi) oxide can be obtained instead. Incorporation of GeI(4) results in the passivation of the metal catalyst, preventing the occurrence of supersaturation, a prerequisite for the catalytic tip growth. We infer that passivation of the metal catalyst impedes Ge incorporation into the catalyst, leaving the catalyst rim as the only active sites for nucleation of both Si and Ge and thus resulting in the growth of GeSi oxide nanotubes via a root-growth process.
Reference
Huang J, Chim WK, Wang S, Chiam SY, Wong LM: From germanium nanowires to germanium-silicon oxide nanotubes: influence of germanium tetraiodide precursor. DOI: 10.1021/nl802713