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  • CY3528 ZrGeTe4 crystal

    • CY3528 ZrGeTe4 crystal

    Catalog No. CY3528
    Material ZrGeTe4
    Size 4-5mm in size
    Crystal Structure Tetragonal phase
    Production Method Flux zone

    ZrGeTe4 crystal is a layered anisotropic semiconductor with the predicted bandgap of 0.4 eV. Stanford Advanced Materials (SAM) has rich experience in manufacturing and supplying high-quality Semiconductor Products.

    Related products: SbTe crystal, HfTe5 crystal, NbTe4 crystal, SiTe2 crystal

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