CY3528 ZrGeTe4 crystal
| Catalog No. | CY3528 |
| Material | ZrGeTe4 |
| Size | 4-5mm in size |
| Crystal Structure | Tetragonal phase |
| Production Method | Flux zone |
ZrGeTe4 crystal is a layered anisotropic semiconductor with the predicted bandgap of 0.4 eV. Stanford Advanced Materials (SAM) has rich experience in manufacturing and supplying high-quality Semiconductor Products.
Related products: SbTe crystal, HfTe5 crystal, NbTe4 crystal, SiTe2 crystal
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Description
Specification
ZrGeTe4 crystal Description
ZrGeTe4 crystal is a layered anisotropic semiconductor with the predicted bandgap of 0.4 eV. While it is layered and can be exfoliated down to few- or monolayers, their properties remain largely unknown. Our ZrGeTe4 vdW crystals are synthesized by using flux zone growth technique at unparalleled 99.9999%. Crystals are cut in c-axis and thus are ready to exfoliate onto desired substrates.
ZrGeTe4 crystal Specifications
|
Size |
~4-5mm in size |
|
Material properties |
2D anisotropic IR semiconductor |
|
Crystal structure |
Tetragonal phase |
|
Unit Cell Parameters |
a=b=0.382nm, c=0.911nm, α=β=90°, γ=120° |
|
Production Method |
Flux zone |
|
Characterization methods |
SIMS, XRD, EDS |
ZrGeTe4 crystal Applications
Research on semiconductor electronic devices, sensors-detectors, optical devices, etc.
ZrGeTe4 crystal Packaging
Our ZrGeTe4 crystal is carefully handled during storage and transportation to preserve the quality of our product in its original condition.
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