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WM3862 Tungsten Diselenide CVD Film (WSe2)

Catalog No. WM3862
Type Single crystal grains
Substrate Material SiO2/Si, silicon wafer, PET, PI, ITO, FTO, glass.
Size 10*10, 15*15, 20*20 mm, or customized
Method Chemical Vapor Deposition (CVD)

We provide Tungsten Diselenide CVD Films on various substrates, such as: SiO2/Si, silicon wafer, PET, PI, ITO, FTO, glass. Stanford Advanced Materials (SAM) has rich experience in manufacturing and supplying high-quality Tungsten Diselenide CVD Film.

Related products: Nickel Telluride CVD Film (NiTe2), Bismuth Selenide CVD Film (Bi2Se3), Tin Diselenide Saphire Film (SnSe2)

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Description
Specification
Technical Data Sheet

Tungsten Diselenide CVD Film Description

SAM provides Tungsten Diselenide CVD Films on various substrates, such as SiO2/Si, silicon wafer, PET, PI, ITO, FTO, glass.

There are many types of WSe2 films:

1) A single layer of discretely distributed triangular-shaped single-crystal grains, the side length of the triangle is generally tens to 100 microns.

2) A single-layer continuous film that continues to grow together from triangular grains.

3) Multi-layer WSe2 continuous film.

4) Substrate: WSe2 has many optional substrates, among which the sapphire substrate is a direct deposition product. Other substrates such as SiO2/Si, silicon wafer, PET, PI, ITO, FTO, glass, metal substrates, etc. are transferred to the customer's required substrate by growing on sapphire.

Tungsten Diselenide CVD Film Application

Optoelectronic devices, microelectronic devices, biological sensing, chemical sensing and other fields.

Tungsten Diselenide CVD Film Packaging

Our Tungsten Diselenide CVD Film (WSe2) is carefully handled during storage and transportation to preserve the quality of our product in its original condition.

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