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CY4005 Tin Sulfide Crystal (SnS Crystal)

Catalog No. CY4005
Material SnS
Crystal Size 5~10 mm
Crystal Structure Hexagonal phase
Band gap 0.95eV
Purity >99.999%

SnS Crystal is a kind of semiconductor with a bandgap of 0.95eV. Stanford Advanced Materials (SAM) has rich experience in manufacturing and supplying high-quality Semiconductor Products.

Related products: SiTe2 crystal, ZrGeTe4 crystal, In2Se3 Crystal

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SnS Crystal
SnS Crystal
SnS Crystal
SnS Crystal
Description
Specification

SnS Crystal Description

SnS Crystal is a layered monochalcogenide semiconductor crystallizing in the orthorhombic phase. The layers of cations are separated only by van der Waals (vdW) forces that provide intrinsically chemically inert surfaces without dangling bonds and surface density of states. Theoretical predictions show that SnS band gap values span from 1.4 eV to 1.9 eV from bulk to monolayer. SnS layers exhibit high in-plane anisotropy and high carrier mobility reaching as high as tens of thousands of cm2V–1s–1 which is superior to that of black phosphorus.

SnS Crystal Specifications

Material

SnS

Crystal Size

5~10 mm

Band gap

0.95eV

Purity

>99.999%

SnS Crystal Experimental Figure

SnS Crystal Application

Their potential uses include photovoltaics, high electron mobility transistors, and catalytic energy conversion technologies.

SnS Crystal Packaging

Our SnS Crystal is carefully handled during storage and transportation to preserve the quality of our product in its original condition.

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