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IN2272 Indium Phosphide Wafer

Catalog No. IN2272
Material InP
Thickness 350 um - 625 um
Conductive Type N - type
Diameter Ø 2" Ø 3" Ø 4"

Stanford Advanced Materials (SAM) provides a wide range of compound wafer including GaAs wafer, GaP wafer, GaSb wafer, InAs wafer, and InP wafer.

Related products: Gallium Nitride Wafer, Gallium Arsenide Wafer, Germanium Wafer (Ge wafer), Gallium Phosphide Wafer, Indium Arsenide Wafer.

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