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IN2271 Indium Arsenide Wafer

Catalog No. IN2271
Material InAs
Thickness 500 um- 625 um
Conductive Type N - type/ P- type
Diameter Ø 2" Ø 3"

Stanford Advanced Materials (SAM) provides high quality single crystal InAs wafer (Indium Arsenide) to the electronic and optoelectronic industry in diameter up to 3 inches.

Related products:  Gallium Nitride WaferSapphire WaferSilicon Carbide WaferSilicon WaferGallium Arsenide Wafer,  Germanium Wafer (Ge wafer).

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IN2271 Indium Arsenide Wafer
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IN2271 Indium Arsenide Wafer
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Technical Data Sheet

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