CY3435 AlN Single Crystal Substrate

AlN Single Crystal Substrate Description

AlN single crystal substrate is a wide bandgap semiconductor material with exceptional characteristics.

The band gap is 6.2eV and has a direct band gap. It is an important blue and ultraviolet light-emitting material; High thermal conductivity, high melting point, high resistivity, strong breakdown field and low dielectric coefficient. It is an excellent electronic material for high temperature, high frequency and high-power devices; AlN oriented along the c-axis has very good piezoelectricity and high-speed propagation properties of surface acoustic waves, and is an excellent piezoelectric material for surface acoustic wave devices.

In view of the excellent physical properties of the above-mentioned AlN materials, AlN crystals are ideal substrates for GaN, AlGaN and AlN epitaxial materials. Compared with sapphire or SiC substrates, AlN and GaN have higher thermal matching and chemical compatibility, and the stress between the substrate and the epitaxial layer is smaller. Therefore, when AlN crystal is used as a GaN epitaxial substrate, the defects in the device can be greatly reduced Density, improve the performance of the device, have a good application prospect in the preparation of high temperature, high frequency, high power electronic devices

AlN Single Crystal Substrate Specifications

AlN Single Crystal Substrate Applications

Aluminum nitride (AlN) single crystal substrates are prized for their high thermal conductivity, excellent electrical insulation, and wide bandgap, making them essential in various advanced applications. In high-frequency and high-power electronics, they are used in RF and microwave devices and power electronics for efficient heat dissipation. In optoelectronics, they support UV LEDs and laser diodes with excellent thermal management. MEMS devices benefit from AlN substrates' piezoelectric properties and thermal stability. AlN substrates are crucial in semiconductor devices, particularly for the growth of GaN and AlGaN semiconductors, enhancing high-power, high-frequency, and high-temperature device performance. They are also used in piezoelectric devices like SAW and BAW filters and oscillators, advanced photonic devices, and heat spreaders in high-power applications. Additionally, AlN substrates are employed in high-temperature sensors, piezoelectric actuators, quantum computing qubit substrates, and solid-state lighting solutions, including LEDs and laser-based systems. Their versatility and exceptional properties make AlN single crystal substrates fundamental to the development of next-generation electronics, optoelectronics, MEMS, photonics, and thermal management technologies.

AlN Single Crystal Substrate Packaging

Our AlN Single Crystal Substrate is carefully handled during storage and transportation to preserve the quality of our product in its original condition.