Ion implantation is an important engineering process by which ions of a material are accelerated in an electrical field and impacted into a target. The process will change the physical, chemical, or electrical properties of the target, which is often used in semiconductor device fabrication, metal finishing and material s science research.
The heart of an implanter system is the beam path, where ions are generated, concentrated, accelerated and guided at high speed to the target. So the materials of beam path should withstand harsh conditions including high temperature, aggressive process gas and strong magnetic fields. Currently the beam path is made of TZM, molybdenum, tungsten, graphite, ceramics and steel.
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