IN2270 Indium Antimonide Wafer
| Catalog No. | IN2270 |
| Material | InSb |
| Thickness | 500 um - 625 um |
| Conductive Type | N - type |
| Diameter | Ø 2" Ø 3" |
Stanford Advanced Materials (SAM) provides a wide range of compound wafers including GaAs wafers, GaP wafers, GaSb wafers, InAs wafers, and InP wafers.
Related products: Gallium Nitride Wafer, Gallium Arsenide Wafer, Germanium Wafer (Ge wafer), Gallium Phosphide Wafer, Indium Arsenide Wafer.
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