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  • IN2270 Indium Antimonide Wafer

    • IN2270 Indium Antimonide Wafer

    Catalog No. IN2270
    Material InSb
    Thickness 500 um - 625 um
    Conductive Type N - type
    Diameter Ø 2" Ø 3"

    Stanford Advanced Materials (SAM) provides a wide range of compound wafers including GaAs wafers, GaP wafers, GaSb wafers, InAs wafers, and InP wafers.

    Related products: Gallium Nitride Wafer, Gallium Arsenide Wafer,  Germanium Wafer (Ge wafer), Gallium Phosphide Wafer, Indium Arsenide Wafer.

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    IN2270 Indium Antimonide Wafer
    IN2270 Indium Antimonide Wafer
    Description
    Specification

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