PRODUCT
SDS

GA2269 Gallium Phosphide Wafer (GaP)

Catalog No. GA2269
Material GaP
Thickness 400um
Conductive Type N - type
Diameter Ø 2"
Size 2’’ dia x 400um-500um thickness, 5x5x0.3-0.5mm, 10x10x0.45mm,

Gallium Phosphide Wafer (GaP) is an important semiconductor material that has unique electrical properties to other III-V compound materials. Stanford Advanced Materials (SAM) provides a high-quality single-crystal GaP wafer (Gallium phosphide) to the electronic and optoelectronic industry in diameters up to 2 inches.

Related products:  Gallium Nitride WaferSapphire WaferSilicon Carbide WaferSilicon WaferGallium Arsenide Wafer,  Germanium Wafer (Ge wafer).

INQUIRY
Add to Inquiry List
sc/1687165164-normal-GA2269-2.jpg
sc/1687165124-normal-GA2269-1.jpg
sc/1687165164-normal-GA2269-2.jpg
sc/1687165124-normal-GA2269-1.jpg
Description
Specification

GET A QUOTE

Send us an Inquiry now to find out more Information and the latest prices, thanks!

*Your Name
*Your Email
*Product
*Phone
*Country

United States

    Comments
    *Check Code
    Leave A Message
    Leave a Message
    *Your Name:
    *E-mail:
    *Product name:
    *Your Phone:
    *Message: